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PIBD Photo resistor LDR
DE920-4J
Price on request
Silicon photo resistor with PN junction, suitable for use as a diode (20 V cut-off voltage)
Light-sensitive surface area: 4.84 mm²
Photoelectric current increase and decay time: 20 ns
Resistance in the dark at approx.10 V: >1 Gohm
Light-sensitive surface area: 4.84 mm²
Photoelectric current increase and decay time: 20 ns
Resistance in the dark at approx.10 V: >1 Gohm